INFINEON? BSZ097N04LSGATMA1? 晶體管, MOSFET, N溝道, 40 A, 40 V, 8.1 mohm, 10 V, 1.2 V

I OptiMOS?3 功率 MOSFET，高達(dá) 40V

OptiMOS?產(chǎn)品提供高效能封裝，以解決最具挑戰(zhàn)性的應(yīng)用，在有限空間內(nèi)提供完全的靈活性。 這些 Infineon 產(chǎn)品經(jīng)的設(shè)計(jì)符合并超過計(jì)算機(jī)應(yīng)用中更嚴(yán)格的下一代電壓調(diào)節(jié)標(biāo)準(zhǔn)的能效和功率密度要求。

快速切換 MOSFET，用于 SMPS

優(yōu)化技術(shù)，用于直流/直流轉(zhuǎn)換器

符合目標(biāo)應(yīng)用的 JEDEC1 規(guī)格

N 通道，邏輯電平

極佳的柵極電荷 x R DSon 產(chǎn)品 FOM

極低導(dǎo)通電阻 R DSon

無鉛電鍍

歐時(shí):
Infineon OptiMOS 3 系列 Si N溝道 MOSFET BSZ097N04LSGATMA1, 40 A, Vds=40 V, 8引腳 TSDSON封裝

得捷:
MOSFET N-CH 40V 12A/40A 8TSDSON

艾睿:
Make an effective common source amplifier using this BSZ097N04LSGATMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 2100 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This N channel MOSFET transistor operates in enhancement mode. This device utilizes optimos technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.

安富利:
Trans MOSFET N-CH 40V 12A 8-Pin TSDSON T/R

Chip1Stop:
Trans MOSFET N-CH 40V 12A 8-Pin TSDSON EP T/R

TME:
Transistor: N-MOSFET; unipolar; 40V; 40A; 35W; PG-TSDSON-8

Verical:
Trans MOSFET N-CH 40V 12A 8-Pin TSDSON EP T/R

Newark:
# INFINEON? BSZ097N04LSGATMA1? MOSFET Transistor, N Channel, 40 A, 40 V, 8.1 mohm, 10 V, 1.2 V